IndiumV3, Russie, Analysis, bibRecord, 000235

Performance of InAs-based infrared photodiodes

Identifieur interne : 000235 ( Russie/Analysis ); précédent : 000234; suivant : 000236

Performance of InAs-based infrared photodiodes

Auteurs : RBID : Pascal:08-0020974

Descripteurs français

Pascal (Inist)
- Photodiode, Détecteur de gaz, Etude expérimentale, Facteur mérite, Rendement quantique, Température ambiante, Composé binaire, Arséniure d'indium, Hétérojonction, Cadmium, Capteur optique, Méthode mesure, InAs, As In, 0707D.
Wicri :
- concept : Cadmium.

English descriptors

KwdEn :
- Ambient temperature, Binary compounds, Cadmium, Experimental study, Figure of merit, Gas detector, Heterojunctions, Indium arsenides, Measuring methods, Optical sensors, Photodiodes, Quantum yield.

Abstract

The performance of infrared InAs homojunction and heterojunction photodiodes (PD) and possibilities of its improvement are analyzed both theoretically and experimentally. The figures of merit such as the resistance-area product R₀A, the carrier lifetime and the quantum efficiency are studied. The excess carrier lifetime in InAs are calculated for radiative and Auger recombination mechanisms using three- and four-band Kane model. Theoretical limit of threshold parameters in InAs-based photodiodes is calculated for intrinsic (radiative and Auger) recombination processes. The diffused PD were prepared by short-term cadmium diffusion into substrates with n-type conductivity. In the investigated PD the total dark current is determined by the diffusion carrier transport mechanism at room temperature. Experimentally proved that heterojunction PD p⁺-InASSbP/n-InAs can be more effective as sensitive element in gas sensors operated at room temperature in comparison with commercially available PD.

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Pascal:08-0020974

Le document en format XML

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<wicri:noRegion>V. Lashkaryev Institute of Semiconductor Physics of NAS of Ukraine</wicri:noRegion>
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<author><name sortKey="Sukach, A V" uniqKey="Sukach A">A. V. Sukach</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>V. Lashkaryev Institute of Semiconductor Physics of NAS of Ukraine</s1>
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<author><name sortKey="Stary, S V" uniqKey="Stary S">S. V. Stary</name>
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<author><name sortKey="Stus, N M" uniqKey="Stus N">N. M Stus</name>
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<term>Gas detector</term>
<term>Heterojunctions</term>
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<term>Measuring methods</term>
<term>Optical sensors</term>
<term>Photodiodes</term>
<term>Quantum yield</term>
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<term>Facteur mérite</term>
<term>Rendement quantique</term>
<term>Température ambiante</term>
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<term>Capteur optique</term>
<term>Méthode mesure</term>
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<front><div type="abstract" xml:lang="en">The performance of infrared InAs homojunction and heterojunction photodiodes (PD) and possibilities of its improvement are analyzed both theoretically and experimentally. The figures of merit such as the resistance-area product R<sub>0</sub>
A, the carrier lifetime and the quantum efficiency are studied. The excess carrier lifetime in InAs are calculated for radiative and Auger recombination mechanisms using three- and four-band Kane model. Theoretical limit of threshold parameters in InAs-based photodiodes is calculated for intrinsic (radiative and Auger) recombination processes. The diffused PD were prepared by short-term cadmium diffusion into substrates with n-type conductivity. In the investigated PD the total dark current is determined by the diffusion carrier transport mechanism at room temperature. Experimentally proved that heterojunction PD p<sup>+</sup>
-InASSbP/n-InAs can be more effective as sensitive element in gas sensors operated at room temperature in comparison with commercially available PD.</div>
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   |texte=   Performance of InAs-based infrared photodiodes
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Performance of InAs-based infrared photodiodes

Performance of InAs-based infrared photodiodes

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri